Millimeter-Wave MIC and MMIC Amplifiers using Pseudomorphic HEMT

This paper reviews the recent works at Toshiba millimeter-wave amplifiers based on the pseudomorphic HEMTs. The HEMT devices used is 0.1 μ m-gate planar doped pseudomorphic HEMT with a gate width of 50 or 100 μ m. Structures, performances and applications of 43 GHz- and 60 GHz-bands amplifiers and 40-60 GHz amplifier have been presented with emphasis on their practicability as well as their low noise performance. Monolithic gain blocks which are essentially HEMT chips with monolithically integrated matching circuits are also described.