Thermoelectric properties on n-type Si80Ge20 with different Dopants

Si
_x
Ge
_1-x
is typical thermoelectric materials used for higher temperature as thermoelectric generator. Their property is dependent on their composition. Here different dopants, including P, Ga, B, GaP, In, Sb and InSb, were used to investigate their effect on the thermoelectric properties of n type Si
₈₀
Ge
₂₀
alloys. The results describe that GaP and InSb are good dopant for n type alloys. Especially p type dopants Ga and In are very good multiplex dopant as dopants GaP and InSb for n type Si
₈₀
Ge
₂₀
respectively by Seebeck coefficient of n type Si
₈₀
Ge
₂₀
at same time