A Fully Implanted 1 W, 18 GHz FET

The reliability of power FET's is strongly affected by the local uniformity of the active layer. Therefore an implanted layer has been optimized for 2.4 mm power devices. The main features of the devices are a 0.7 um gate length, a 50 um unit gate width and a via-hole source grounding. An output power of 1 W at 18 GHz with 6 dB linear gain has been measured. This result is the best ever reported for implanted power devices, and demonstrates the potentiality of ion implantation for power FET's production.