A Wide - Band, High Power. Linear Transistor at 4 GHz

This paper describes the state of the art reached with silicon linear bipolar transistors in the 4 GHz frequency range. Designed with a five gigahertz process, the device, internally input and output matched is able to deliver 2.5 W of wide band linear power in the 3.7 to 4.2 GHz range at 1 dB of gain compression.