A Modular 0.18 um Analog / RFCMOS Technology Comprising 32 GHz FT RF-LDMOS and 40V Complementary MOSFET Devices

High-performance RF-LDMOS, medium voltage (8-12V), and high voltage (20-40V) NLDMOS and PLDMOS devices, integrated in a modular 0.18 mum analog CMOS/RFCMOS technology platform, are described. Device design, process integration, manufacturability, and reliability issues are discussed. These devices are among the highest performance in their class. The successful integration of these devices has enabled us to address our roadmap in the growing wireless, analog, mixed-signal, and power management markets