Dopant-Segregated Ni-Silicide Schottky-Source/Drain CMOS on Strained-Si/SiGe Multiple Quantum-Well Channel on Bulk-Si

The authors report for the first time a high performance Schottky-barrier S/D transistor with strained-Si/SiGe multiple-quantum-well channel (MQW-SBT). Through dopant-segregation at Ni-silicide/Si interface and utilizing the smaller bandgap of channel materials, Schottky-barrier height was modulated resulting in Phi
_b
(to electron) ~0.13eV in n-MOS and Phi
_b
(hole) ~0.086 eV in p-MOS. This enhanced modulation in MQW helps to achieve high IDs with I
_on
/I
_off
ratio ~ 10
⁶
. Significant mobility enhancements of 2.5times (electron) and 3.2times (hole) were achieved for MQW-SBTs over bulk Si DS-SBT