Channel resistance method for parameter extraction of ultra-thin gate oxide LDD MOSFET's

An improved differential extraction method is proposed by intentionally splitting the close interdependence between the parasitic series resistance R
_ds
and the channel length reduction DeltaL. Compared with traditional differential method, the improved one eliminates the overestimation of the bias-dependence of R
_ds
and DeltaL especially at high gate bias, gives meaningful extractions in whole the gate overdrive V
_gt
range. The method is suitable for ultrathin gate oxide MOSFETs with significant gate leakage current