Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis

In this work, the dominant quantum effects in nano devices are investigated by the full quantum simulation based on the QDAME algorithm, which is suitable to analyze the quantum open system. Compared with the classical drift-diffusion mechanism, the full quantum simulation predicts that due to the carrier tunneling from source to drain in off-state, the control of source/drain (S/D) lateral diffusion becomes more crucial in nano devices to suppress the short-channel-effects (SCEs) and reduce the off-state leakage current. Considering the induced S/D-gate capacitance, a practical method is also proposed to optimize the lateral diffusion length