Impact of Intrinsic Parameter Fluctuations on SRAM Cell Design

Intrinsic parameter fluctuations, arising from the granular nature of charge and matter, are predicted to be a critical roadblock to the future CMOS 6-T SRAM scaling. A hierarchal simulation methodology, which can fully collate intrinsic parameter fluctuation information into compact model sets, is employed to investigate the impact of random dopant fluctuation on SRAM static noise margin, and the bias control technology is introduced as a possible solution to improve the SRAM's immunity to intrinsic parameter fluctuation