Investigation of Gate-Induced Drain Leakage Current in Ultra-thin Gate Oxide LDD nMOSFET's

The gate-induced drain leakage current (GIDL) current is investigated in LDD nMOSFET's. It is shown that under constant drain-to-gate voltage (V
_DG
) the difference between I
_D
in the off-state I
_D
-V
_G
characteristics and the corresponding one in the off-state I
_D
-V
_D
characteristics, which is defined as D
_IFF
, versus V
_DG
shows a peak. Moreover, the natural logarithm of the maximum D
_IFF
(D
_IFF
,
_MAX
) varies linearly with V
_DG
. The D
_IFF
,
_MAX
-V
_DG
curves of different thickness gate oxide(4nm and 1.4nm) are presented. Moreover, it is found that D
_IFF
curve shifts upwards with increasing temperature