Resonant Tunneling Diodes on Si Substrates Using Fluoride Heterostructures and Feasibility of Application to Integrated Circuits

Resonant tunneling diodes (RTDs) composed of heteroepitaxial fluorides on Si substrates have been investigated as a candidate of Si-based highly functional quantum device. Problems for growth of good heterostructure were overcame by various techniques such as post oxidation, introduction of fluoride alloy system, improved heterostructures and V-grooved structures. These techniques improved electrical properties and stability of the fluoride RTDs significantly, and made such devices realistic candidates for co-integration in the Si-based integrated circuits