In-Plane and Perpendicular Hall Magnetoresistance Ratio in MgO/FeCo/Pt/GdFeCo

AGM hysteresis and Hall magnetoresistance ratio (HMR) with in-plane (IP) fields and perpendicular (P) fields of multilayered films of amorphous RE-TM layers separated by a Pt inter-layer, are measured and compared. Hall voltage variation with P-field is twice larger than IP-field. It indicates more charges were deflected by the P-field than IP-field. Discrepancy of P-HMR and IP-HMR in forward (-B to +B) and reverse trace (+B to -B) are consistent with AGM hysteresis. Measured P-HMR and IP-HMR are almost 10 times over conventional MR