178GHz InP/InGaAs HBT with /spl mu/-bridge

An InP-based single-heterojunction bipolar transistor (SHBT) with base mu-bridge and emitter air-bridge is reported in this paper. Because those bridges reduce parasite greatly, cutoff frequency f
_T
of the 2 times 12.5 mum
²
InP SHBT without de-embedding reaches 178GHz. Such device can output more power than traditional structure HBT with the same f
_T
because of wider emitter. And it is critical to support high-speed low to medium power applications, such as OEIC receivers and analog-to-digital converters