Drain Disturb Related to Negative VB in NOR flash

In this paper, the effects of negative substrate bias on the drain disturb of NOR ETOXtrade flash EEPROM have been investigated. According to the quantity of the charge stored in the floating gate, the tests can be separated into two cases (CL: charge loss & CG: charge gain), and in some of the cases, an optimal negative substrate bias condition will be obtained as a trade-off between efficiency and reliability