Fabrication and properties of nano-Si quantum dot flash memory

We proposed a novel integration processes including multilayer CVD poly-Si deposition and post-annealing and thermal oxidation processes for nano-Si quantum dot flash memory devices have been fabricated. With increasing tunneling oxide thickness, the operation voltage increases, but retention properties are improved. With increasing nono-Si particle sizes and layer thickness the memory window increases from 6V to 12V. After programming to "on" or "off" states, the drain current read at 1V is about 5 times 10
^-4
A and 5 times 10
^-12
A respectively. The ratio of "on" current to "off" current is about 8 orders. The nano-Si quantum dot memory devices show very good properties