An assessment of the performance for double gate Schottky barrier MOSFETs with modulated back gate

A new structure of double gate SB MOSFET in which one of the gates is used to modulate the electric potential distribution (back gate modulated SB MOSFET) is proposed and compared with conventional double gate SB MOSFET and UTB SB MOSFET in terms of off state leakage current, on state current and minimum current, as well as sub-threshold slope(S). The mechanism of SB MOSFET leakage current in off state is analyzed. The influence of back gate voltage on the performance of the SB MOSFETs with various parameters of channel doping, Schottky barrier height and the scalability is investigated. The results can provide a design guideline for further devices optimization