Investigation of nanowire orientation and embedded Si/sub 1-x/Ge/sub x/ source/drain influence on Twin Silicon Nano-Wire Field Effect Transistor (TSNWFET)

This paper describes TSNWFET devices with embedded Si
_1-x
Ge
_x
source/drain regions and different nanowire orientations. Thick Si
_1-x
Ge
_x
embedded source/drain and lang110rang channel orientation is found effective to enhance p-channel TSNWFET performance, while cause degradation for n-channel one. Thin Si
_1-x
Ge
_x
and lang100rang channel orientation is the preferred combination for keeping n-TSNWFET performance. With lang110rang channel orientation and thick Si
_1-x
Ge
_x
in source/drain, p-MOS current, for the first time, is even observed to exceed its n-type counterpart from the experiments