Fabrication and characterization of the amorphous-silicon static induction transistor

Experimental results for the fabrication and electrical characterization of a hydrogenated amorphous silicon static induction transistor are reported. The I-V measurements demonstrate the triode-like enhancement mode operation of the device and show an on-off current ratio of 300 and a pinchoff voltage of -9.5 V for V/sub ds/=6 V. Numerical simulation suggests that the differences between experimental and theoretically predicted results are due to the presence of a high-density-of-states layer at the a-Si:H/a-Si:H interface.<
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