Switching Loss Analysis and Modeling of Power Semiconductor Devices Base on an Automatic Measurement System

Design of the automatic measurement system for switching energy losses of power semiconductor devices is described in the paper. Automatic regulation of DC link voltage, collector current, gate drive voltage, gate resistance, and device junction temperature can be realized. Switching energy losses of the devices under different conditions can be obtained conveniently with this system. Based on plenty of measured data from the automatic measurement system and the corresponding analysis, Different methods including two traditional curve fitting method based on different function types and neural network (NN) curve fitting method have been tried to modeling the switching energy losses. All of these methods can take into account the above 5 parameters and are implemented in a 1200V/20A NPT IGBT. The modeling result shows that the NN has a better accuracy when the measured data is sufficient enough to describe the whole operation area of the device.