GeCu Thin Films for Inorganic Write-Once Media

The Ge
_100-x
Cu
_x
thin films (x=50 at.%-69 at.%) were deposited on nature oxidized Si (100) wafer by dc co-sputtering of Ge and Cu targets. Microstructures was analyzed by X-ray diffractometer. The optical and thermal properties were measured from static test. It was found that the as-deposited phase was single supersaturated epsiv-Cu
₃
Ge phase and it was transformed to Ge and epsiv-Cu
₃
Ge coexisting phases after annealing at 400degC. The reflectivity of as-deposited film was higher than that of annealed film