Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Novel materials based on the Ga-Sb-Te system are proposed as a medium for phase-change memory (PCM). Studied compositions were located along the pseudo-binary tie-line GaSb-Sb
₈
Te
₂
, in which the atomic ratio Sb/Te of GaSbTe films is higher by incorporating GaSb into Sb
₈
Te
₂
, indicating a possible higher crystallization speed hereof. The GaSbTe films were explored by systematic evaluations of crystallinity, crystallization, and melting temperatures (T
_x
, T
_m
), resistivity at crystalline and amorphous states (R
_c
, R
_a
), R
_a
/R
_c
ratio and temperature-dependent electrical resistivity for PCM. The Ga
₃
Sb
₈
Te
₁
composition, exhibiting single endothermic peak, lower T
_m
, higher T
_x
/T
_m
and R
_a
/R
_c
ratios, suitable T
_x
, and electrical resistivity at crystalline state, is highly potential for PCM to reduce the reset current