Electrical Properties of nMOSFETs Using the NiSi:Yb FUSI Electrode

In this letter, nMOSFETs using a NiSi:Yb fully silicide (FUSI) electrode are demonstrated for the first time. We report that the integration of NiSi:Yb FUSI into our reference n-FETs with the respective SiON / HfSiON gate dielectrics results in a V
_t
reduction from 0.55/0.52 down to 0.30/0.43 V, without degradation of the gate dielectric integrity, channel interface states, and long channel device mobility