Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy

We evaluated the redistribution profiles of ion-implanted impurities during solid-phase epitaxy using Rutherford backscattering spectrometry (RBS). RBS data revealed that the As concentration changes only near the moving amorphous/crystal interface. We derived an analytical model for the redistribution profiles using a segregation coefficient $m$ between amorphous and crystalline Si, introduced a parameter of reaction length $l$ that is the distance where impurities were exchanged, and obtained good agreement with experimental data with an $m$ value of 3 and an $l$ value of 1 nm for As. Furthermore, we applied our model to P and B redistribution profiles and obtained good agreement with corresponding $m$ value of 4 and $l$ value of 1 nm for P and $m$ value of 0.3 and $l$ value of 1 nm for B.