On-State Behaviour of Diamond M-i-P Structures

Diamond Schottky power diodes are currently subject to extensive research. In this paper, the on-state capability of this type of structures is assessed. Measured forward characteristics for different temperatures are included and the use of gold, nickel and aluminium as Schottky metal is evaluated. A theoretical study regarding the influence of different doping profiles at the drift-substrate interface on the electrical performance of the device is also inserted