Multiple Type Grid Approach for 3D Process Simulation

Various aspects of discretization and data representation in a generic 3D process simulator are discussed. It is shown that the only practical way to provide the efficient and robust simulation of various process steps is to use application specific gridding and numeric methods for distinct process step and provide smooth synchronization and data transformation between the simulation modules. We demonstrate how this approach can be successfully used for simulation of complete 50 nm MOSFET device cell starting from the physical layout and finish with simulation of its IV characteristics using the device simulator ATLAS3D