Robust GaAs MMIC amplifiers using planar ion-implanted power MESFETs with improved open-channel burnout

Planar ion-implanted GaAs MESFETs with modified drain n/sup +/ regions show increased open-channel burnout voltage, making them robust against transient overvoltages. This increases circuit yields through pulsed on-wafer testing from <50% to /spl sim/90%. Higher drain biases can also be used, allowing 9 W of output power to be produced with VD/sub DS/=13 V by an X-band MMIC amplifier designed to produce 4 W with V/sub DS/=7 V.<
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