LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs

This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP HBT one. Extraction of the pre-eminent current noise source, Si
_B
occurring at the emitter-base junction area is realized. The 1/f noise is considered as a technological figure-of-merit and Lorentzian shape noise is investigated