Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements

Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions