Time-Domain Component Analysis of Heavy-Ion-Induced Transient Currents in Fully-Depleted SOI MOSFETs

Current components of heavy-ion-induced transient currents in a 0.2-mum fully-depleted SOI MOSFET are analyzed in the time domain. The analysis demonstrates that the transient currents have another slow-decay current component that is different from the two conventional current components: a prompt discharge current and a slow-decay parasitic bipolar current. The slow-decay component revealed here is a flow of deposited carriers stored in the body region to maintain quasi-neutrality, and it drastically widens the transient pulse