Epitaxial growth of NbN and NbC/sub x/N/sub 1-x/ films on 3C-SiC film-covered Si wafers

Epitaxial NbN and NbC/sub x/N/sub 1-x/ (x<0.3) films were fabricated on 3C-SiC film-covered Si wafers. It is found that epitaxial NbN films fabricated on 3C-SiC/Si substrates have about one degree higher T/sub c/'s than those for epitaxial NbN films fabricated on MgO substrates. T/sub c/ and normal-state resistivity of fabricated epitaxial NbC/sub x/N/sub 1-x/ films depended on the 3C-SiC overlayer thickness of substrates. From results of R-T characteristic measurements, it is deduced that contact resistance of 3C-SiC and NbN strongly depends on the growth orientation of crystals.<
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