An improved etching process used for the fabrication of submicron Nb/AlO/sub x//Nb Josephson junctions

It is important to develop a reliable and reproducible fabrication process of submicron Nb/AlO/sub x//Nb Josephson junctions to improve the integration level and the operating speed of the Josephson LSI circuit. For this purpose, we have developed an improved etching process by introducing a dummy etching process and using a scanning electron microscope (SEM) as an etching end-point detector. The dummy etching process improves the anisotropy of a reactive ion etching (RIE) process using CF/sub 4/. The etching residue around a junction is detected easily and correctly by the SEM observation. We have successfully fabricated Nb/AlO/sub x//Nb Josephson junctions with critical current density of 10/sup 4/ A/cm/sup 2/ using the cross-line patterning (CLIP) method and electron beam lithography, where the junction size was varied from 2 /spl mu/m to 0.5 /spl mu/m at 0.1 /spl mu/m intervals. High-quality submicron junctions for integrated circuits with suitable critical current variations were obtained.<
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