Study on the Retention Time of Body Tied FINFET DRAM with <100> Channel Directional Wafer

A negative word line (NWL) bias scheme is adapted to the body tied finFET DRAM. But, increased gate induced drain leakage (GIDL) degrade data retention time. The retention time of lang100rang channel directional wafer (CW) was compared to that of lang110rang CW. Using lang100rang CW to the finFET DRAM, the reduced GIDL current improve the data retention time