Effect of Chemical Mechanical Polish Process on Low-Temperature Poly-Sige Thin-Film Transistors

The improvement of polycrystalline silicon germanium thin-film transistors (poly-SiGe TFTs) using NH
₃
passivation and chemical mechanical polishing (CMP) process was examined. Experimental results indicated that NH
₃
passivation could effectively improve the turn on characteristics. Moreover, the TFTs fabricated on polished poly-SiGe film exhibit higher carrier mobility, better subthreshold swing, lower threshold voltage, and higher on/off current ratio due to the smooth poly-SiGe interface