Accurate Characterization on Intrinsic Gate Oxide Reliability using Voltage Ramp Tests

We show that voltage ramp testing of gate oxides exhibits exactly the same physics as constant voltage testing (TDDB). Intrinsic oxide reliability may, therefore, be accurately assessed from rapid ramp voltage tests. Accurate conversion from ramp voltage to constant voltage testing can also be achieved in the range 1.6 to 28nm, indicating that voltage ramp testing can be used to replace time-consuming constant voltage tests