Microwave Amplification Using Space Charge Waves in Strained Si/SiGe Heterostructures at 77K

Based on the negative differential conductance phenomenon, we theoretically investigate the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K. A comparison between the n-GaAs thin film and strained Si/SiGe heterostructure of this amplification effect is included as well. We have obtained 2D results of the propagation and amplification of space charge waves in a strained Si/SiGe heterostructure up to a frequency f of 40 GHz