Effect of Nitrogen and Hydrogen on the Charge Trapping Properties of Silicon Rich Oxide

In this paper, the effect of nitrogen and hydrogen incorporation into silicon rich oxide (SRO) on its charge-trapping properties was studied. The samples were prepared by low pressure chemical vapor deposition (LPCVD) on Si substrates, and nitrogen was introduced into SRO adding NH
₃
to the reactive gases. Hydrogen was incorporated by low temperature annealing in forming gas. The charge properties of the nitrogenated/hydrogenated SRO were studied applying a DC voltage stress previous to high frequency C-V measurements. It was found that N
₂
increases significantly the charging density. An explanation is presented in order to interpret the experimental results