Impact of WSix Metal Gate Stoichiometry on Fully Depleted SOI MOSFETs Electrical Properties

For the first time, we report fully depleted SOI MOS transistors with WSi
_x
gate on HfO
₂
. Gate work function, dielectric properties and channel mobility are presented in terms of Si/W ratio and compared to TiN gate devices. A 35% electron mobility gain was obtained with a WSi
_x
gate device as compared to a TiN gate transistor. It was found that both mobility and dielectric characteristics were drastically improved by decreasing the Si/W ratio of WSi
_x
films