Compact On-Chip Three-Dimensional Electromagnetic Bandgap Structure

In this paper, we present a compact 3-dimensional dimensional on-chip electromagnetic bandgap (EBG) structure with a unit size of 200μm on 400μm-thick silicon making use of a recently developed high aspect-ratio through-wafer vias. The on-chip EBG structure consists of parallel plane capacitance between two overlapped metal plane with PECVD silicon nitride as dielectric and 50μm Cu-filled through-wafer vias as inductors. The novel 3-D on-chip structure exhibits a crosstalk suppression of 30 dB at 8 GHz with a 2-GHz bandgap.