Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide $(\hbox{HfO}_{2})$ Film Added on Silicon Dioxide $(\hbox{SiO}_{2})$

In this paper, metal-oxide-semiconductor (MOS) capacitors fabricated on p-type silicon substrate with hafnium oxide (HfO
₂
) film added on silicon dioxide (SiO
₂
) were demonstrated as reliable temperature-detecting devices. The saturation current of MOS (p) capacitor with added HfO
₂
film is easy to saturate within 0.5 V. From 40 degC to 90degC, each increase of 10degC almost doubles the saturation current. The C-V curves show that the interface properties of Si/SiO
₂
and SiO
₂
/HfO
₂
are good. It was also shown that these devices are reliable even though they had been electrically stressed at various temperatures (30degC~90degC) for 15 000 s. They have the potential to be integrated into the circuits as temperature detectors in the era of ultralarge-scale-integration technology