Pseudo Y-Junction Single-Walled Carbon Nanotube Based Ambipolar Transistor Operating at Room Temperature

A nanoscale field-effect transistor (FET) was fabricated based on pseudo Y-junction single-walled carbon nanotubes (Y-SWNTs). The Y-junction transistor was modulated by a metallic branch of the Y-SWNTs, and exhibited ambipolar FET characteristics at room temperature. A subthreshold swing of 700 mV/decade and an on/off ratio of 10
⁵
with a low off-state current of ~10
^-13
A were obtained. Analysis of the electrical transport of pseudo Y-SWNTs is fundamental to the study of transport properties in a carbon nanotube mat (CNT-mat)