A floating gate method for MOS transistor gate capacitance and Leff measurements and its implementation in a parametric test

A method for the measurement of the effective channel length and gate capacitances of metal-oxide semiconductor (MOS) transistors is introduced. This method translates capacitance measurement into a simple threshold voltage measurement and is very accurate in the determination of effective channel lengths of short channel DDD and LDD devices. This technique is implemented in a parametric tester for routine process monitoring.<
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