Dependence of linewidth enhancement factor on crystal orientation in strained quantum well lasers

The linewidth enhancement factor a in strained quantum well (QW) lasers is estimated theoretically for various crystallographic directions. It is found that the a factor in a strained In/sub 0.7/Ga/sub 0.3/As-InP QW laser on a [111] substrate is less than 1.4, much lower than for conventional strained QW lasers on [001] substrates.<
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