Electrical characteristics of oxide-nitride-oxide films formed on tunnel-structured stacked capacitors

Current conduction mechanism of oxide-nitride-oxide films formed on tunnel-structured stacked capacitor (TSSC) was studied. At positive and negative bias, the Poole-Frenkel (P-F) conduction of holes in the nitride (SiN/sub x/) film dominates the total leakage current. From the P-F plot, the relative dielectric constant of the SiN/sub x/ was calculated. The electric field inside the structure was also calculated by assuming the model that characterizes the electrode shape inside the tunnel. From the results, the reason why the reliability of the TSSC is not lowered in comparison with the conventional stacked capacitor is discussed.<
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