Monolithic high-voltage FET power amplifiers

High-voltage field-effect transistor (HVFET) power amplifiers offer improved system efficiency through reduced DC power distribution loss and more efficient DC power conditioning. Results are presented for the first such monolithic microwave integrated circuit (MMIC) amplifiers and four-cell amplifiers at X-band. Drain bias voltages up to 40 V have been achieved with such amplifiers. It is expected that this technique will lead to improved DC-to-RF conversion efficiency in satellite transponders by allowing an electronic power conditioner to be eliminated or replaced by a simple voltage regulator.<
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