Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect

A set of numerical simulations were performed on 0.22 μm SOI MOSFET's with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I-V characteristics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation results show that both the hydrodynamic and energy transport models handle the effect of velocity overshoot on the I-V characteristic of the 0.12 μm device well.