Characteristics of SiN/sub x//InP/In/sub 0.53/Ga/sub 0.47/As/InP heterostructure insulated gate (HIG)FET's with an In/sub 2/S/sub 3/ interface control layer

InP/InGaAs HIGFET's with SiN/sub x/ as gate insulator have been fabricated for the first time. An In/sub 2/S/sub 3/ interface control layer (ICL) is used to reduce trap states at the InP/SiN/sub x/ interface. The ICL HIGFET's show excellent drain I-V characteristics and allows large gate swings (/spl plusmn/5 V) with negligible (<1 nA) gate leakage.<
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