Electro-optic imaging of internal fields in (111) GaAs photoconductors

The nonuniform electric field in a surface (111) GaAs photoconductor was imaged for the first time using the electro-optic effect of the device itself. The technique used a mode-locked 1.06 /spl mu/m laser with 150 ps pulses to transiently probe the electric field profile at various times following application of a synchronized pulsed voltage bias.<
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