A low cost and high current gain a-Si/c-Si heterojunction photoreceiver for large area optoelectronics integrated circuit applications

An integrated a-Si/c-Si heterojunction p-i-n/n-p-n photoreceiver with high current gain performance is reported. The operation mechanism and experimental results of the device are discussed in the letter. In comparison with other III-V compound photoreceivers, the developed device does not need an additional gate bias and shows its compatibility with the periphery circuit for optoelectronic integrated circuit (OEIC) applications.<
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