GaInAs(P)/InP ultra-fine structures: fabrication processes, quantum-wire lasers, and photonic devices

Summary form only given. Recent progress in fabrication processes toward GaInAs(P)/InP low-dimensional quantum-well structures by EBX lithography followed by wet chemical etching and a low-pressure OMVPE regrowth is presented. A CW threshold current density of 816 A/cm/sup 2/ was obtained with a Ga/sub 0.66/In/sub 0.34/As/InP tensile-strained single-quantum-well laser 30-40 nm wide and with a 70 nm periodic active region.<
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