Temperature effects on GTO characteristics

The turn-off characteristics and forward conduction drop of gate turn-off thyristors (GTOs) are examined over a temperature range of -150 to 125/spl deg/C. The forward conduction drop and dynamic performance of these GTOs are discussed and compared to the behavior of other types of thyristors, such as SCRs and MOS-controlled thyristors (MCTs). An analytical description of the forward conduction voltage drop is developed. Particular emphasis is on the low-temperature behavior of the GTOs as it relates to high-temperature superconducting (HTS) power electronics applications.<
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